A Brief Study on Challenges of Mosfet and Evolution of Finfets

The rapid progress of silicon technology is continuing with present generation technologies of gate lengths less than 22 nm. Moore’s law states the scaling of ICs, which carried out a lot of research in Nano world. Early years of silicon era used MOSFETs for designing the circuits. Many research articles have been published that demonstrate the improved short-channel effects of conventional bulk MOSFETs [1-4,5-7]. FinFET and Trigate devices have been explored thoroughly in the past decade [8–15]. Power Challenges introduced by nanometre gate length are Short Channel effects and Variability. Section II introduces the Short channel effects(SCE) [18].Change of Materials to over come SCE is discussed in Section III .Various technologies have evolved to overcome short channel effect which is introduced in Section IV [16]. FinFETs are studied in section V[16,18].